IRF7484PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

3520pF @ 25V

Rds On Max :

10 MΩ

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Series :

HEXFET®

Gate to Source Voltage (Vgs) :

8V

Number of Elements :

1

Supplier Device Package :

8-SO

Drain to Source Voltage (Vdss) :

40V

Drain to Source Breakdown Voltage :

40V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Turn-Off Delay Time :

180 ns

FET Type :

N-Channel

Packaging :

Tube

Power Dissipation-Max :

2.5W Ta

Current Rating :

14A

Published :

2004

Radiation Hardening :

No

Vgs (Max) :

±8V

Lead Free :

Lead Free

Power Dissipation :

2.5W

Min Operating Temperature :

-55°C

Max Operating Temperature :

150°C

Drain to Source Resistance :

10MOhm

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 7V

Drive Voltage (Max Rds On,Min Rds On) :

7V

Mount :

Surface Mount

Mounting Type :

Surface Mount

Rise Time :

5ns

Rds On (Max) @ Id, Vgs :

10mOhm @ 14A, 7V

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

14A Ta

Continuous Drain Current (ID) :

14A

Voltage - Rated DC :

40V

Input Capacitance :

3.52nF

Fall Time (Typ) :

58 ns

Vgs(th) (Max) @ Id :

2V @ 250μA