IRF7478TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

26m Ω @ 4.2A, 10V

Power Dissipation :

2.5W

Current Rating :

4.2A

Length :

4.9784mm

Factory Lead Time :

12 Weeks

Voltage - Rated DC :

60V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2004

Drain to Source Breakdown Voltage :

60V

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 4.5V

Vgs (Max) :

±20V

Turn-Off Delay Time :

44 ns

Resistance :

26mOhm

Power Dissipation-Max :

2.5W Ta

Number of Pins :

8

Fall Time (Typ) :

13 ns

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

3V @ 250µA

Max Junction Temperature (Tj) :

150°C

Continuous Drain Current (ID) :

4.2A

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Mount :

Surface Mount

Threshold Voltage :

3V

FET Type :

N-Channel

Element Configuration :

Single

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

7A

Turn On Delay Time :

7.7 ns

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

1740pF @ 25V

RoHS Status :

ROHS3 Compliant

Width :

3.9878mm

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Height :

1.75mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Radiation Hardening :

No

Rise Time :

2.6ns

Series :

HEXFET®

Contact Plating :

Tin

Number of Channels :

1

Current - Continuous Drain (Id) @ 25°C :

7A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)