IRF7478PBF
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- Mfr.Part #
- IRF7478PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 7A 8SO
- Stock
- 131,994
- In Stock ：
- 131,994
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2004
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 31nC @ 4.5V
- Packaging :
- Tube
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 26m Ω @ 4.2A, 10V
- Drain to Source Voltage (Vdss) :
- 60V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Current - Continuous Drain (Id) @ 25°C :
- 7A Ta
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Factory Lead Time :
- 14 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 1740pF @ 25V
- Power Dissipation-Max :
- 2.5W Ta
- Series :
- HEXFET®
- Datasheets
- IRF7478PBF
N-Channel Tube 26m Ω @ 4.2A, 10V ±20V 1740pF @ 25V 31nC @ 4.5V 60V 8-SOIC (0.154, 3.90mm Width)
IRF7478PBF Description
IRF7478PBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 60V. The operating temperature of the IRF7478PBF is -55??C~150??C TJ and its maximum power dissipation is 2.5W Ta. IRF7478PBF has 8 pins and it is available in Tube packaging way. The Drain to Source Voltage (Vdss) of IRF7478PBF is 60V.
IRF7478PBF Features
-
Low Gate to Drain Charge to Reduce Switching Losses
-
Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
-
Fully Characterized Avalanche Voltage and Current
IRF7478PBF Applications
-
High frequency DC-DC converters
-
Lead-Free
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