IRF7477PBF
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- Mfr.Part #
- IRF7477PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 14A 8SO
- Stock
- 2,993
- In Stock ：
- 2,993
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- RoHS Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Breakdown Voltage :
- 30V
- Radiation Hardening :
- No
- Vgs (Max) :
- ±20V
- Published :
- 2004
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Rds On (Max) @ Id, Vgs :
- 8.5m Ω @ 14A, 10V
- Fall Time (Typ) :
- 5.9 ns
- Packaging :
- Tube
- Voltage - Rated DC :
- 30V
- Nominal Vgs :
- 2.5 V
- REACH SVHC :
- No SVHC
- Series :
- HEXFET®
- Power Dissipation-Max :
- 2.5W Ta
- Rise Time :
- 9.8ns
- Mounting Type :
- Surface Mount
- Current Rating :
- 14A
- Dual Supply Voltage :
- 30V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Number of Pins :
- 8
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Resistance :
- 8.5mOhm
- Power Dissipation :
- 2.5W
- Height :
- 1.5mm
- Operating Temperature :
- -55°C~150°C TJ
- Row Spacing :
- 6.3 mm
- Current - Continuous Drain (Id) @ 25°C :
- 14A Ta
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 4.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 14A
- Width :
- 4mm
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 19 ns
- Length :
- 5mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 2710pF @ 15V
- Turn On Delay Time :
- 12 ns
- Datasheets
- IRF7477PBF
N-Channel Tube 8.5m Ω @ 14A, 10V ±20V 2710pF @ 15V 38nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)
IRF7477PBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2710pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 14A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 19 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
IRF7477PBF Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 19 ns
IRF7477PBF Applications
There are a lot of Infineon Technologies
IRF7477PBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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