IRF7477
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- Mfr.Part #
- IRF7477
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 14A 8SO
- Stock
- 12,159
- In Stock ：
- 12,159
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 2.5W Ta
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Series :
- HEXFET®
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 30V
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 2710pF @ 15V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 8.5m Ω @ 14A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 4.5V
- RoHS Status :
- Non-RoHS Compliant
- Mounting Type :
- Surface Mount
- Published :
- 2007
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Current - Continuous Drain (Id) @ 25°C :
- 14A Ta
- Vgs (Max) :
- ±20V
- Datasheets
- IRF7477
N-Channel Tube 8.5m Ω @ 14A, 10V ±20V 2710pF @ 15V 38nC @ 4.5V 30V 8-SOIC (0.154, 3.90mm Width)
IRF7477 Description
IRF7477 is an N-channel Power MNOSFET transistor from the manufacturer Infineon Technologies with a voltage of 30V. The operating temperature of the IRF7477 is -55°C~150°C TJ and its maximum power dissipation is 2.5W Ta. IRF7477 has 8 pins and it is available in Tube packaging way. The Drain to Source Voltage (Vdss) of the IRF7477 is 30V.
IRF7477 Features
-
Ultra-Low Gate Impedance
-
Very Low RDS(on)
-
Fully Characterized Avalanche Voltage and Current
-
Low Charge Ratio to Eliminate False Turn On in High Frequency Circuits
IRF7477 Applications
-
High Frequency Synchronous Buck Converters for Computers and Communications
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