IRF7471TRPBF
- Mfr.Part #
- IRF7471TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 10A 8SO
- Stock
- 11,334
- In Stock :
- 11,334
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 13mOhm @ 10A, 10V
- Drain to Source Voltage (Vdss) :
- 40V
- Current - Continuous Drain (Id) @ 25°C :
- 10A Ta
- Power Dissipation-Max :
- 2.5W Ta
- Power Dissipation :
- 2.5W
- Packaging :
- Tape and Reel (TR)
- Supplier Device Package :
- 8-SO
- Voltage - Rated DC :
- 40V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 15 ns
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Published :
- 2004
- Number of Pins :
- 8
- Input Capacitance :
- 2.82nF
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Current Rating :
- 10A
- Drain to Source Resistance :
- 16mOhm
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Max Operating Temperature :
- 150°C
- Mounting Type :
- Surface Mount
- Series :
- HEXFET®
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Turn On Delay Time :
- 12 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 2820pF @ 20V
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 4.5V
- Rise Time :
- 2.7ns
- Min Operating Temperature :
- -55°C
- Drain to Source Breakdown Voltage :
- 40V
- RoHS Status :
- RoHS Compliant
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 10A
- Rds On Max :
- 13 mΩ
- Datasheets
- IRF7471TRPBF

N-Channel Tape & Reel (TR) 13mOhm @ 10A, 10V ±20V 2820pF @ 20V 32nC @ 4.5V 40V 8-SOIC (0.154, 3.90mm Width)
IRF7471TRPBF Overview
A device's maximal input capacitance is 2820pF @ 20V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 10A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 15 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 16mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
IRF7471TRPBF Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 15 ns
single MOSFETs transistor is 16mOhm
a 40V drain to source voltage (Vdss)
IRF7471TRPBF Applications
There are a lot of Infineon Technologies
IRF7471TRPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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