IRF7471PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Vgs (Max) :

±20V

Min Operating Temperature :

-55°C

Power Dissipation-Max :

2.5W Ta

Input Capacitance :

2.82nF

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Max Operating Temperature :

150°C

Continuous Drain Current (ID) :

10A

Input Capacitance (Ciss) (Max) @ Vds :

2820pF @ 20V

Packaging :

Tube

Series :

HEXFET®

Number of Elements :

1

Number of Pins :

8

Drain to Source Breakdown Voltage :

40V

RoHS Status :

RoHS Compliant

Drain to Source Voltage (Vdss) :

40V

Length :

5mm

Height :

1.5mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate to Source Voltage (Vgs) :

20V

Published :

2004

Vgs(th) (Max) @ Id :

3V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

13mOhm @ 10A, 10V

REACH SVHC :

No SVHC

Turn-Off Delay Time :

15 ns

FET Type :

N-Channel

Radiation Hardening :

No

Fall Time (Typ) :

4.1 ns

Turn On Delay Time :

12 ns

Rds On Max :

13 mΩ

Mount :

Surface Mount

Mounting Type :

Surface Mount

Width :

4mm

Power Dissipation :

2.5W

Supplier Device Package :

8-SO

Rise Time :

2.7ns

Drain to Source Resistance :

16mOhm

Threshold Voltage :

3V

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 4.5V

Current Rating :

10A

Voltage - Rated DC :

40V