IRF7470TR
- Mfr.Part #
- IRF7470TR
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 10A 8SO
- Stock
- 937
- In Stock :
- 937
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Terminal Finish :
- Matte Tin (Sn)
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 40V
- Series :
- HEXFET®
- Number of Terminations :
- 8
- Published :
- 2003
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rise Time :
- 1.9ns
- Current - Continuous Drain (Id) @ 25°C :
- 10A Ta
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 10A
- Number of Pins :
- 8
- JESD-609 Code :
- e3
- Qualification Status :
- Not Qualified
- Lead Free :
- Contains Lead
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.8V 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3430pF @ 20V
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- AVALANCHE RATED
- JEDEC-95 Code :
- MS-012AA
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 0.013Ohm
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate Charge (Qg) (Max) @ Vgs :
- 44nC @ 4.5V
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 10A, 10V
- RoHS Status :
- Non-RoHS Compliant
- Current Rating :
- 11A
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±12V
- Terminal Form :
- Gull wing
- Power Dissipation-Max :
- 2.5W Ta
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Datasheets
- IRF7470TR

N-Channel Tape & Reel (TR) 13m Ω @ 10A, 10V ±12V 3430pF @ 20V 44nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)
IRF7470TR Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 300 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3430pF @ 20V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.In addition to reducing power consumption, this device uses drive voltage (2.8V 10V).
IRF7470TR Features
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 10A
IRF7470TR Applications
There are a lot of Infineon Technologies
IRF7470TR applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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