IRF7468

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.0155Ohm

Terminal Finish :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-G8

Pulsed Drain Current-Max (IDM) :

75A

Terminal Form :

Gull wing

Number of Terminations :

8

Published :

2004

Transistor Application :

SWITCHING

Packaging :

Tube

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

9.4A Ta

Avalanche Energy Rating (Eas) :

160 mJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

40V

JEDEC-95 Code :

MS-012AA

Additional Feature :

AVALANCHE RATED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

2460pF @ 20V

Vgs (Max) :

±12V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

9.4A

Rds On (Max) @ Id, Vgs :

15.5m Ω @ 9.4A, 10V

Drain to Source Voltage (Vdss) :

40V

Series :

HEXFET®

Vgs(th) (Max) @ Id :

2V @ 250μA

RoHS Status :

Non-RoHS Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Power Dissipation-Max :

2.5W Ta