IRF7468

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Additional Feature :

AVALANCHE RATED

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

2460pF @ 20V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Position :

Dual

Avalanche Energy Rating (Eas) :

160 mJ

Number of Elements :

1

Vgs(th) (Max) @ Id :

2V @ 250μA

Drain-source On Resistance-Max :

0.0155Ohm

Rds On (Max) @ Id, Vgs :

15.5m Ω @ 9.4A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

8

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2004

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 4.5V

Drain Current-Max (Abs) (ID) :

9.4A

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

FET Type :

N-Channel

Mounting Type :

Surface Mount

JEDEC-95 Code :

MS-012AA

RoHS Status :

Non-RoHS Compliant

Vgs (Max) :

±12V

Power Dissipation-Max :

2.5W Ta

Current - Continuous Drain (Id) @ 25°C :

9.4A Ta

Terminal Finish :

NOT SPECIFIED

DS Breakdown Voltage-Min :

40V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

Series :

HEXFET®

JESD-30 Code :

R-PDSO-G8

Drain to Source Voltage (Vdss) :

40V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

75A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)