IRF7467TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

4 ns

Supplier Device Package :

8-SO

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Max Operating Temperature :

150°C

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

2V @ 250μA

Drain to Source Breakdown Voltage :

30V

Turn-Off Delay Time :

19 ns

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mounting Type :

Surface Mount

Number of Pins :

8

Gate to Source Voltage (Vgs) :

12V

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

12mOhm @ 11A, 10V

Power Dissipation :

2.5W

Radiation Hardening :

No

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 4.5V

Drain to Source Voltage (Vdss) :

30V

Vgs (Max) :

±12V

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Published :

2004

Power Dissipation-Max :

2.5W Ta

Mount :

Surface Mount

Drain to Source Resistance :

12mOhm

Continuous Drain Current (ID) :

11A

Input Capacitance :

2.53nF

Turn On Delay Time :

7.8 ns

Rise Time :

2.5ns

Input Capacitance (Ciss) (Max) @ Vds :

2530pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On Max :

12 mΩ

Packaging :

Tape and Reel (TR)

Min Operating Temperature :

-55°C

Number of Elements :

1