IRF7467PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

8-SO

Power Dissipation-Max :

2.5W Ta

Current Rating :

11A

Drain to Source Resistance :

13.5mOhm

Vgs(th) (Max) @ Id :

2V @ 250μA

Continuous Drain Current (ID) :

11A

Rise Time :

2.5ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Threshold Voltage :

2V

Mounting Type :

Surface Mount

Fall Time (Typ) :

4 ns

Width :

4mm

Current - Continuous Drain (Id) @ 25°C :

11A Ta

FET Type :

N-Channel

Vgs (Max) :

±12V

Number of Pins :

8

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 10V

Input Capacitance :

2.53nF

Input Capacitance (Ciss) (Max) @ Vds :

2530pF @ 15V

Drain to Source Breakdown Voltage :

30V

Mount :

Surface Mount

Max Operating Temperature :

150°C

Packaging :

Tube

Turn-Off Delay Time :

19 ns

Min Operating Temperature :

-55°C

Published :

2004

Height :

1.5mm

REACH SVHC :

No SVHC

Number of Elements :

1

Length :

5mm

Voltage - Rated DC :

30V

Turn On Delay Time :

7.8 ns

Rds On (Max) @ Id, Vgs :

12mOhm @ 11A, 10V

Series :

HEXFET®

Rds On Max :

12 mΩ

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

12V

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 4.5V

Drain to Source Voltage (Vdss) :

30V

Power Dissipation :

2.5W