IRF7466TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Min Operating Temperature :

-55°C

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

2.5W Ta

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Power Dissipation :

2.5W

Series :

HEXFET®

Resistance :

12.5mOhm

Vgs (Max) :

±20V

Current Rating :

11A

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Max Operating Temperature :

150°C

Rise Time :

2.8ns

Input Capacitance :

2.1nF

Published :

2004

Number of Elements :

1

FET Type :

N-Channel

RoHS Status :

RoHS Compliant

Drain to Source Resistance :

17mOhm

Supplier Device Package :

8-SO

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

2100pF @ 15V

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 4.5V

Continuous Drain Current (ID) :

11A

Rds On Max :

12.5 mΩ

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

30V

Vgs(th) (Max) @ Id :

3V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Rds On (Max) @ Id, Vgs :

12.5mOhm @ 11A, 10V

Voltage - Rated DC :

30V