IRF7466PBF
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- Mfr.Part #
- IRF7466PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 11A 8SO
- Stock
- 3,499
- In Stock ：
- 3,499
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 2.5W
- Drain to Source Voltage (Vdss) :
- 30V
- Drain to Source Breakdown Voltage :
- 30V
- Termination :
- SMD/SMT
- REACH SVHC :
- No SVHC
- Max Operating Temperature :
- 150°C
- Rds On (Max) @ Id, Vgs :
- 12.5mOhm @ 11A, 10V
- Number of Elements :
- 1
- Rds On Max :
- 12.5 mΩ
- Current Rating :
- 11A
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Number of Pins :
- 8
- Nominal Vgs :
- 3 V
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Min Operating Temperature :
- -55°C
- Lead Free :
- Lead Free
- Drain to Source Resistance :
- 17mOhm
- Published :
- 2004
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Supplier Device Package :
- 8-SO
- Input Capacitance (Ciss) (Max) @ Vds :
- 2100pF @ 15V
- Mounting Type :
- Surface Mount
- RoHS Status :
- RoHS Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 11A Ta
- Row Spacing :
- 6.3 mm
- Continuous Drain Current (ID) :
- 11A
- Fall Time (Typ) :
- 3.6 ns
- Dual Supply Voltage :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 2.5W Ta
- Voltage - Rated DC :
- 30V
- Turn-Off Delay Time :
- 13 ns
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Input Capacitance :
- 2.1nF
- Width :
- 4.05mm
- Series :
- HEXFET®
- Rise Time :
- 2.8ns
- Gate Charge (Qg) (Max) @ Vgs :
- 23nC @ 4.5V
- Threshold Voltage :
- 3V
- Packaging :
- Tube
- Datasheets
- IRF7466PBF
N-Channel Tube 12.5mOhm @ 11A, 10V ±20V 2100pF @ 15V 23nC @ 4.5V 30V 8-SOIC (0.154, 3.90mm Width)
IRF7466PBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2100pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 11A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [13 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 17mOhm.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 3V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
IRF7466PBF Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 13 ns
single MOSFETs transistor is 17mOhm
a threshold voltage of 3V
a 30V drain to source voltage (Vdss)
IRF7466PBF Applications
There are a lot of Infineon Technologies
IRF7466PBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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