IRF7464TRPBF
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- Mfr.Part #
- IRF7464TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 1.2A 8SO
- Stock
- 1,854
- In Stock ：
- 1,854
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 9.5ns
- Supplier Device Package :
- 8-SO
- Drain to Source Voltage (Vdss) :
- 200V
- Max Operating Temperature :
- 150°C
- Mount :
- Surface Mount
- Input Capacitance :
- 280pF
- Mounting Type :
- Surface Mount
- Resistance :
- 730mOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 280pF @ 25V
- Turn-Off Delay Time :
- 18 ns
- Rds On Max :
- 730 mΩ
- Power Dissipation :
- 2.5W
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 1.2A
- Series :
- HEXFET®
- Current Rating :
- 1.2A
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- RoHS Status :
- RoHS Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 1.2A Ta
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 730mOhm @ 720mA, 10V
- Drain to Source Breakdown Voltage :
- 200V
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Voltage - Rated DC :
- 200V
- Element Configuration :
- Single
- Vgs (Max) :
- ±30V
- Published :
- 2004
- Number of Pins :
- 8
- Fall Time (Typ) :
- 15 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 2.5W Ta
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Resistance :
- 730mOhm
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Min Operating Temperature :
- -55°C
- Number of Elements :
- 1
- Datasheets
- IRF7464TRPBF
N-Channel Tape & Reel (TR) 730mOhm @ 720mA, 10V ±30V 280pF @ 25V 14nC @ 10V 200V 8-SOIC (0.154, 3.90mm Width)
IRF7464TRPBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 280pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 1.2A amps.In this device, the drain-source breakdown voltage is 200V and VGS=200V, so the drain-source breakdown voltage is 200V in this case.It is [18 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 730mOhm.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you will need a 200V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRF7464TRPBF Features
a continuous drain current (ID) of 1.2A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 18 ns
single MOSFETs transistor is 730mOhm
a 200V drain to source voltage (Vdss)
IRF7464TRPBF Applications
There are a lot of Infineon Technologies
IRF7464TRPBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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