IRF7464PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Nominal Vgs :

5.5 V

Vgs (Max) :

±30V

Drain to Source Voltage (Vdss) :

200V

Power Dissipation :

2.5W

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Rds On Max :

730 mΩ

Rise Time :

9.5ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Supplier Device Package :

8-SO

REACH SVHC :

No SVHC

Power Dissipation-Max :

2.5W Ta

Voltage - Rated DC :

200V

Number of Elements :

1

Continuous Drain Current (ID) :

1.2A

Dual Supply Voltage :

200V

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

730mOhm @ 720mA, 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Min Operating Temperature :

-55°C

Max Operating Temperature :

150°C

Number of Pins :

8

Current Rating :

1.2A

Turn-Off Delay Time :

18 ns

FET Type :

N-Channel

Drain to Source Resistance :

730mOhm

Current - Continuous Drain (Id) @ 25°C :

1.2A Ta

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

280pF @ 25V

Published :

2004

Termination :

SMD/SMT

Series :

HEXFET®

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

15 ns

Threshold Voltage :

5.5V

Drain to Source Breakdown Voltage :

200V

Input Capacitance :

280pF