IRF7463TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

2V

Turn-Off Delay Time :

28 ns

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

320 mJ

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 10V

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Nominal Vgs :

2 V

Terminal Finish :

Matte Tin (Sn)

Resistance :

8mOhm

Input Capacitance (Ciss) (Max) @ Vds :

3150pF @ 15V

Packaging :

Tape and Reel (TR)

Length :

4.9784mm

Rise Time :

16ns

Operating Temperature :

-55°C~150°C TJ

Published :

2004

Terminal Form :

Gull wing

Turn On Delay Time :

16 ns

Power Dissipation-Max :

2.5W Ta

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Vgs (Max) :

±12V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Contains Lead, Lead Free

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

8m Ω @ 14A, 10V

Voltage - Rated DC :

30V

REACH SVHC :

No SVHC

Radiation Hardening :

No

Current Rating :

14A

Current - Continuous Drain (Id) @ 25°C :

14A Ta

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

14A

Height :

1.4986mm

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 4.5V

Transistor Application :

SWITCHING

Power Dissipation :

2.5W

Number of Terminations :

8

Terminal Position :

Dual

Fall Time (Typ) :

6.5 ns

FET Type :

N-Channel

Number of Pins :

8

Width :

3.9878mm

Gate to Source Voltage (Vgs) :

12V

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2V @ 250μA

Drain to Source Breakdown Voltage :

30V

Number of Elements :

1

Mount :

Surface Mount