IRF7463TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

320 mJ

Lead Free :

Contains Lead, Lead Free

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Vgs (Max) :

±12V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

8

Element Configuration :

Single

Nominal Vgs :

2 V

Vgs(th) (Max) @ Id :

2V @ 250μA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Continuous Drain Current (ID) :

14A

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

3150pF @ 15V

Width :

3.9878mm

Power Dissipation-Max :

2.5W Ta

Rise Time :

16ns

Fall Time (Typ) :

6.5 ns

Mounting Type :

Surface Mount

Threshold Voltage :

2V

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 4.5V

Gate to Source Voltage (Vgs) :

12V

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Published :

2004

Factory Lead Time :

12 Weeks

Number of Pins :

8

REACH SVHC :

No SVHC

Length :

4.9784mm

Rds On (Max) @ Id, Vgs :

8m Ω @ 14A, 10V

Drain to Source Breakdown Voltage :

30V

Current - Continuous Drain (Id) @ 25°C :

14A Ta

Current Rating :

14A

Mount :

Surface Mount

Voltage - Rated DC :

30V

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 10V

Power Dissipation :

2.5W

Series :

HEXFET®

Radiation Hardening :

No

Turn On Delay Time :

16 ns

RoHS Status :

ROHS3 Compliant

Resistance :

8mOhm

Terminal Form :

Gull wing

Number of Elements :

1

Height :

1.4986mm

Turn-Off Delay Time :

28 ns