IRF7463TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

8m Ω @ 14A, 10V

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2V @ 250μA

JESD-30 Code :

R-PDSO-G8

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 4.5V

Drain to Source Voltage (Vdss) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

3150pF @ 15V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.008Ohm

Qualification Status :

Not Qualified

Power Dissipation-Max :

2.5W Ta

DS Breakdown Voltage-Min :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

Non-RoHS Compliant

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

SWITCHING

Terminal Position :

Dual

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 10V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

110A

Drain Current-Max (Abs) (ID) :

14A

Vgs (Max) :

±12V

Terminal Form :

Gull wing

Published :

2006

Avalanche Energy Rating (Eas) :

320 mJ

Number of Terminations :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

14A Ta