IRF7460PBF
- Mfr.Part #
- IRF7460PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 12A 8SO
- Stock
- 69,179
- In Stock :
- 69,179
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 12A Ta
- Max Operating Temperature :
- 150°C
- Fall Time (Typ) :
- 4.3 ns
- Vgs (Max) :
- ±20V
- Mount :
- Surface Mount
- Rds On Max :
- 10 MΩ
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- REACH SVHC :
- No SVHC
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Packaging :
- Tube
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 20V
- Supplier Device Package :
- 8-SO
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 8
- Continuous Drain Current (ID) :
- 12A
- Min Operating Temperature :
- -55°C
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Resistance :
- 14mOhm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2050pF @ 10V
- Rise Time :
- 6.9ns
- Power Dissipation-Max :
- 2.5W Ta
- Drain to Source Breakdown Voltage :
- 20V
- Turn-Off Delay Time :
- 12 ns
- FET Type :
- N-Channel
- Published :
- 2004
- Nominal Vgs :
- 3 V
- Rds On (Max) @ Id, Vgs :
- 10mOhm @ 12A, 10V
- Series :
- HEXFET®
- Current Rating :
- 12A
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 4.5V
- Power Dissipation :
- 2.5W
- Input Capacitance :
- 2.05nF
- Drain to Source Voltage (Vdss) :
- 20V
- Datasheets
- IRF7460PBF

N-Channel Tube 10mOhm @ 12A, 10V ±20V 2050pF @ 10V 19nC @ 4.5V 20V 8-SOIC (0.154, 3.90mm Width)
IRF7460PBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2050pF @ 10V.This device has a continuous drain current (ID) of [12A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=20V, the drain-source breakdown voltage is 20V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 12 ns.MOSFETs have 14mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
IRF7460PBF Features
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 12 ns
single MOSFETs transistor is 14mOhm
a 20V drain to source voltage (Vdss)
IRF7460PBF Applications
There are a lot of Infineon Technologies
IRF7460PBF applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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