IRF7459

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

20V

Continuous Drain Current (ID) :

12A

Series :

HEXFET®

Power Dissipation :

2.5W

Published :

2007

Vgs (Max) :

±12V

Power Dissipation-Max :

2.5W Ta

Rise Time :

4.5ns

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

20V

Number of Pins :

8

RoHS Status :

Non-RoHS Compliant

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

Max Operating Temperature :

150°C

Vgs(th) (Max) @ Id :

2V @ 250μA

Rds On Max :

9 mΩ

Rds On (Max) @ Id, Vgs :

9mOhm @ 12A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Input Capacitance :

2.48nF

Current - Continuous Drain (Id) @ 25°C :

12A Ta

Current Rating :

12A

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 4.5V

Supplier Device Package :

8-SO

Min Operating Temperature :

-55°C

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

2480pF @ 10V

FET Type :

N-Channel

Lead Free :

Contains Lead