IRF7457TRPBF
- Mfr.Part #
- IRF7457TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 15A 8SO
- Stock
- 16,685
- In Stock :
- 16,685
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 14 ns
- Voltage - Rated DC :
- 20V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 7.5 ns
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 7m Ω @ 15A, 10V
- Continuous Drain Current (ID) :
- 15A
- Height :
- 1.75mm
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Number of Pins :
- 8
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Rise Time :
- 16ns
- Power Dissipation-Max :
- 2.5W Ta
- Drain to Source Breakdown Voltage :
- 20V
- Voltage :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 15A Ta
- Current Rating :
- 15A
- Number of Channels :
- 1
- Current :
- 5A
- Max Junction Temperature (Tj) :
- 150°C
- Factory Lead Time :
- 14 Weeks
- Turn-Off Delay Time :
- 16 ns
- Series :
- HEXFET®
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 3100pF @ 10V
- Packaging :
- Tape and Reel (TR)
- Published :
- 2004
- REACH SVHC :
- No SVHC
- Gate Charge (Qg) (Max) @ Vgs :
- 42nC @ 4.5V
- Threshold Voltage :
- 3V
- Power Dissipation :
- 2.5W
- Gate to Source Voltage (Vgs) :
- 20V
- Lead Free :
- Contains Lead, Lead Free
- Vgs (Max) :
- ±20V
- Resistance :
- 7mOhm
- Width :
- 3.9878mm
- Length :
- 4.9784mm
- Datasheets
- IRF7457TRPBF

N-Channel Tape & Reel (TR) 7m Ω @ 15A, 10V ±20V 3100pF @ 10V 42nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)
IRF7457TRPBF Overview
A device's maximal input capacitance is 3100pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 15A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 20V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 16 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 14 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3V threshold voltage.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
IRF7457TRPBF Features
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 16 ns
a threshold voltage of 3V
IRF7457TRPBF Applications
There are a lot of Infineon Technologies
IRF7457TRPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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