IRF7457PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

265 mJ

Packaging :

Tube

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Form :

Gull wing

Power Dissipation-Max :

2.5W Ta

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

JEDEC-95 Code :

MS-012AA

ECCN Code :

EAR99

Published :

2004

Drain-source On Resistance-Max :

0.007Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

15A Ta

JESD-30 Code :

R-PDSO-G8

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 4.5V

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

120A

Drain Current-Max (Abs) (ID) :

15A

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

DS Breakdown Voltage-Min :

20V

Drain to Source Voltage (Vdss) :

20V

Number of Terminations :

8

Additional Feature :

ULTRA-LOW RESISTANCE

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

7m Ω @ 15A, 10V

Surface Mount :

yes