IRF7457

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

HTS Code :

8541.29.00.95

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 4.5V

Operating Temperature :

-55°C~150°C TJ

Published :

2004

Terminal Position :

Dual

Avalanche Energy Rating (Eas) :

265 mJ

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

245

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

2.5W Ta

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

Non-RoHS Compliant

Drain to Source Voltage (Vdss) :

20V

DS Breakdown Voltage-Min :

20V

JESD-30 Code :

R-PDSO-G8

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

15A

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.007Ohm

JESD-609 Code :

e0

Terminal Finish :

TIN LEAD

Packaging :

Tube

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 10V

Number of Terminations :

8

JEDEC-95 Code :

MS-012AA

Additional Feature :

ULTRA-LOW RESISTANCE

Qualification Status :

Not Qualified

Surface Mount :

yes

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

7m Ω @ 15A, 10V

Series :

HEXFET®

Pulsed Drain Current-Max (IDM) :

120A

Vgs(th) (Max) @ Id :

3V @ 250µA

ECCN Code :

EAR99