IRF7456TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Rise Time :

25ns

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

20V

Number of Elements :

1

Series :

HEXFET®

Length :

4.9784mm

Resistance :

6.5mOhm

Continuous Drain Current (ID) :

16A

Current - Continuous Drain (Id) @ 25°C :

16A Ta

Avalanche Energy Rating (Eas) :

250 mJ

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 10V

Threshold Voltage :

2V

Number of Terminations :

8

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 16A, 10V

Transistor Application :

SWITCHING

Turn-Off Delay Time :

50 ns

Voltage - Rated DC :

20V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Current Rating :

16A

Vgs(th) (Max) @ Id :

2V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Recovery Time :

72 ns

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 5V

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

3640pF @ 15V

Nominal Vgs :

2 V

Number of Pins :

8

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

2.5W Ta

Mount :

Surface Mount

Terminal Position :

Dual

Power Dissipation :

2.5W

Dual Supply Voltage :

20V

Terminal Form :

Gull wing

Fall Time (Typ) :

52 ns

Factory Lead Time :

12 Weeks

Gate to Source Voltage (Vgs) :

12V

Mounting Type :

Surface Mount

Height :

1.4986mm

FET Type :

N-Channel

Turn On Delay Time :

20 ns

Contact Plating :

Tin

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Width :

3.9878mm

Radiation Hardening :

No

Published :

2008

Vgs (Max) :

±12V