IRF7456TRPBF-1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max (Abs) :

2.5 W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

62 nC @ 5 V

Input Capacitance (Ciss) (Max) @ Vds :

3640 pF @ 15 V

Pin Count :

8

Drain Current-Max (Abs) (ID) :

16 A

Category :

Power MOSFET

Maximum Power Dissipation (mW) :

2500

Process Technology :

HEXFET

EU RoHS :

Compliant

Typical Input Capacitance @ Vds (pF) :

3640@15V

Channel Type :

N

Technology :

MOSFET (Metal Oxide)

Rds On (Max) @ Id, Vgs :

6.5mOhm @ 16A, 10V

Drain to Source Voltage (Vdss) :

20 V

Operating Temperature :

-55°C ~ 150°C (TJ)

Series :

HEXFET®

Maximum Continuous Drain Current (A) :

16

Standard Package Name :

SOP

Lead Shape :

Gull-wing

Current - Continuous Drain (Id) @ 25°C :

16A (Ta)

Typical Fall Time (ns) :

52

Typical Turn-Off Delay Time (ns) :

50

Channel Mode :

Enhancement

PPAP :

No

Vgs(th) (Max) @ Id :

2V @ 250μA

Maximum IDSS (uA) :

20

Package :

Tape and Reel (TR)

Drive Voltage (Max Rds On, Min Rds On) :

2.8V, 10V

Maximum Drain Source Voltage (V) :

20

Mounting :

Surface Mount

Maximum Gate Source Leakage Current (nA) :

200

Minimum Operating Temperature (°C) :

-55

Package / Case :

8-SOIC (0.154, 3.90mm Width)

HTS :

8541.21.00.95

Typical Rise Time (ns) :

25

Automotive :

No

Number of Elements per Chip :

1

Maximum Operating Temperature (°C) :

150

PCB changed :

8

Manufacturer :

Infineon Technologies AG

Polarity/Channel Type :

N-Channel

Package Height :

1.5(Max)

Product Status :

Obsolete

Power Dissipation (Max) :

2.5W (Ta)

Maximum Gate Threshold Voltage (V) :

2

FET Feature :

-

Mounting Type :

Surface Mount

Package Length :

5(Max)

Supplier Device Package :

8-SOIC

Maximum Gate Source Voltage (V) :

±12

Surface Mount :

yes

Supplier Package :

SOIC

Reach Compliance Code :

Compliant

ECCN (US) :

EAR99

Package Width :

4(Max)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs (Max) :

±12V

Configuration :

Single Quad Drain Triple Source

Packaging :

Tape and Reel

Subcategory :

FET General Purpose Power

Typical Gate Charge @ Vgs (nC) :

41@5V

FET Type :

N-Channel

Typical Turn-On Delay Time (ns) :

20