IRF7456PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PDSO-G8

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 5V

Number of Elements :

1

Avalanche Energy Rating (Eas) :

250 mJ

Additional Feature :

ULTRA LOW RESISTANCE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

ECCN Code :

EAR99

Number of Terminations :

8

Surface Mount :

yes

Drain-source On Resistance-Max :

0.0065ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 16A, 10V

Packaging :

Tube

Power Dissipation-Max :

2.5W Ta

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 10V

Terminal Form :

Gull wing

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

3640pF @ 15V

Pulsed Drain Current-Max (IDM) :

130A

Drain Current-Max (Abs) (ID) :

16A

Published :

2004

JEDEC-95 Code :

MS-012AA

Vgs(th) (Max) @ Id :

2V @ 250μA

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

20V

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±12V

DS Breakdown Voltage-Min :

20V

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

16A Ta

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING