IRF7455TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Dual Supply Voltage :

30V

Turn On Delay Time :

17 ns

Gate to Source Voltage (Vgs) :

12V

Length :

4.9784mm

Power Dissipation :

2.5W

Number of Pins :

8

Element Configuration :

Single

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 5V

Vgs(th) (Max) @ Id :

2V @ 250μA

Threshold Voltage :

2V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

1

Number of Elements :

1

Breakdown Voltage :

30V

Transistor Element Material :

SILICON

Terminal Position :

Dual

Transistor Application :

SWITCHING

Recovery Time :

96 ns

Drain to Source Breakdown Voltage :

30V

Terminal Form :

Gull wing

Factory Lead Time :

12 Weeks

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Series :

HEXFET®

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

3480pF @ 25V

RoHS Status :

ROHS3 Compliant

Rise Time :

18ns

Fall Time (Typ) :

44 ns

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

8

Current Rating :

15A

Lead Free :

Contains Lead, Lead Free

Continuous Drain Current (ID) :

15A

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 15A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 10V

Mount :

Surface Mount

Nominal Vgs :

2 V

Vgs (Max) :

±12V

Resistance :

7.5mOhm

REACH SVHC :

No SVHC

Max Junction Temperature (Tj) :

150°C

Power Dissipation-Max :

2.5W Ta

Turn-Off Delay Time :

51 ns

Avalanche Energy Rating (Eas) :

200 mJ

Height :

1.75mm

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Radiation Hardening :

No

Voltage - Rated DC :

30V

Width :

3.9878mm

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED

Published :

2004