IRF7455PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

3480pF @ 25V

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Terminal Position :

Dual

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 5V

Number of Elements :

1

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 10V

Avalanche Energy Rating (Eas) :

200 mJ

Pulsed Drain Current-Max (IDM) :

120A

Packaging :

Tube

Drain to Source Voltage (Vdss) :

30V

FET Type :

N-Channel

Number of Terminations :

8

Drain Current-Max (Abs) (ID) :

15A

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-G8

Additional Feature :

AVALANCHE RATED

Transistor Application :

SWITCHING

Published :

2004

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 15A, 10V

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

JEDEC-95 Code :

MS-012AA

Power Dissipation-Max :

2.5W Ta

Drain-source On Resistance-Max :

0.0075Ohm

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

Series :

HEXFET®

Vgs (Max) :

±12V

Factory Lead Time :

22 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

30V