IRF7453
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- Mfr.Part #
- IRF7453
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 2.2A 8SO
- Stock
- 39,731
- In Stock ：
- 39,731
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Vgs (Max) :
- ±30V
- Series :
- HEXFET®
- Current - Continuous Drain (Id) @ 25°C :
- 2.2A Ta
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 2.5W Ta
- Packaging :
- Tube
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 930pF @ 25V
- Drain to Source Voltage (Vdss) :
- 250V
- RoHS Status :
- Non-RoHS Compliant
- Supplier Device Package :
- 8-SO
- Rds On (Max) @ Id, Vgs :
- 230mOhm @ 1.3A, 10V
- Published :
- 2010
- Datasheets
- IRF7453
N-Channel Tube 230mOhm @ 1.3A, 10V ±30V 930pF @ 25V 38nC @ 10V 250V 8-SOIC (0.154, 3.90mm Width)
IRF7453 Description
IRF7453 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a Drain to Source Voltage (Vdss) of 250V. The operating temperature of the IRF7453 is -55°C~150°C TJ and its maximum power dissipation is 2.5W Ta. IRF7453 has 8 pins and it is available in Tube packaging way.
IRF7453 Features
-
Low Gate to Drain Charge to Reduce Switching Losses
-
Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001)
-
Fully Characterized Avalanche Voltage and Current
IRF7453 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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