IRF7452TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5.5V @ 250µA

JESD-30 Code :

R-PDSO-G8

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta

Rds On (Max) @ Id, Vgs :

60m Ω @ 2.7A, 10V

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

36A

Terminal Form :

Gull wing

RoHS Status :

Non-RoHS Compliant

Transistor Element Material :

SILICON

Published :

2001

Drain to Source Voltage (Vdss) :

100V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

DS Breakdown Voltage-Min :

100V

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±30V

FET Type :

N-Channel

JESD-609 Code :

e3

ECCN Code :

EAR99

Terminal Position :

Dual

Avalanche Energy Rating (Eas) :

200 mJ

Mounting Type :

Surface Mount

Number of Terminations :

8

Number of Elements :

1

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Input Capacitance (Ciss) (Max) @ Vds :

930pF @ 25V

Drain Current-Max (Abs) (ID) :

4.5A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Series :

HEXFET®

JEDEC-95 Code :

MS-012AA

Drain-source On Resistance-Max :

0.06Ohm

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

2.5W Ta