IRF7452PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

100V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mount :

Surface Mount

REACH SVHC :

No SVHC

Recovery Time :

120 ns

Gate to Source Voltage (Vgs) :

30V

Vgs (Max) :

±30V

Power Dissipation-Max :

2.5W Ta

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

930pF @ 25V

Continuous Drain Current (ID) :

4.5A

Voltage - Rated DC :

100V

Factory Lead Time :

39 Weeks

Turn On Delay Time :

9.5 ns

Radiation Hardening :

No

Terminal Form :

Gull wing

Element Configuration :

Single

Length :

4.9784mm

Fall Time (Typ) :

13 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Rds On (Max) @ Id, Vgs :

60m Ω @ 2.7A, 10V

Number of Terminations :

8

Transistor Application :

SWITCHING

Dual Supply Voltage :

100V

Height :

1.4986mm

RoHS Status :

ROHS3 Compliant

Width :

3.9878mm

Rise Time :

11ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

5.5V

Lead Free :

Lead Free

Number of Pins :

8

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta

Turn-Off Delay Time :

16 ns

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

200 mJ

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Pulsed Drain Current-Max (IDM) :

36A

Series :

HEXFET®

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Power Dissipation :

2.5W

Packaging :

Tube

ECCN Code :

EAR99

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Nominal Vgs :

5.5 V

Published :

2001

Resistance :

60mOhm

Terminal Position :

Dual

Current Rating :

4.5A