IRF7452

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

100V

Terminal Finish :

Tin/Lead (Sn/Pb)

JEDEC-95 Code :

MS-012AA

JESD-609 Code :

e0

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

Non-RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

245

JESD-30 Code :

R-PDSO-G8

Mounting Type :

Surface Mount

Vgs (Max) :

±30V

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

4.5A

Input Capacitance (Ciss) (Max) @ Vds :

930pF @ 25V

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

30

Drain-source On Resistance-Max :

0.06Ohm

HTS Code :

8541.29.00.95

Avalanche Energy Rating (Eas) :

200 mJ

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Packaging :

Tube

Number of Terminations :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Power Dissipation-Max :

2.5W Ta

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

100V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Pulsed Drain Current-Max (IDM) :

36A

Series :

HEXFET®

Terminal Form :

Gull wing

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

60m Ω @ 2.7A, 10V

Published :

2001

Number of Elements :

1