IRF7452

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

HTS Code :

8541.29.00.95

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

930pF @ 25V

Published :

2001

Vgs (Max) :

±30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

60m Ω @ 2.7A, 10V

JESD-609 Code :

e0

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

4.5A

JESD-30 Code :

R-PDSO-G8

Pulsed Drain Current-Max (IDM) :

36A

Drain-source On Resistance-Max :

0.06Ohm

DS Breakdown Voltage-Min :

100V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

245

Power Dissipation-Max :

2.5W Ta

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Form :

Gull wing

Packaging :

Tube

Number of Elements :

1

Drain to Source Voltage (Vdss) :

100V

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Surface Mount :

yes

Terminal Finish :

Tin/Lead (Sn/Pb)

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

8

RoHS Status :

Non-RoHS Compliant

Series :

HEXFET®

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

200 mJ

Terminal Position :

Dual

JEDEC-95 Code :

MS-012AA

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta