IRF7451TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.09Ohm

Power Dissipation :

2.5W

Number of Terminations :

8

Current Rating :

3.6A

Rds On (Max) @ Id, Vgs :

90m Ω @ 2.2A, 10V

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Mount :

Surface Mount

Power Dissipation-Max :

2.5W Ta

Pulsed Drain Current-Max (IDM) :

29A

Fall Time (Typ) :

15 ns

Operating Temperature :

-55°C~150°C TJ

Height :

1.4986mm

ECCN Code :

EAR99

Length :

4.9784mm

Terminal Position :

Dual

Number of Elements :

1

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

3.6A Ta

Transistor Application :

SWITCHING

Number of Pins :

8

Published :

2004

Width :

3.9878mm

FET Type :

N-Channel

Turn On Delay Time :

10 ns

Continuous Drain Current (ID) :

3.6A

Operating Mode :

ENHANCEMENT MODE

Rise Time :

4.2ns

Input Capacitance (Ciss) (Max) @ Vds :

990pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

HEXFET®

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

150V

Turn-Off Delay Time :

17 ns

Gate to Source Voltage (Vgs) :

30V

Voltage - Rated DC :

150V