IRF7451PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

3.9878mm

Nominal Vgs :

5.5 V

Number of Terminations :

8

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

29A

Height :

1.4986mm

Series :

HEXFET®

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

150V

Current Rating :

3.6A

Rise Time :

4.2ns

Mounting Type :

Surface Mount

Radiation Hardening :

No

Min Operating Temperature :

-55°C

Fall Time (Typ) :

15 ns

Lead Free :

Lead Free

Length :

4.9784mm

Transistor Application :

SWITCHING

Mount :

Surface Mount

Published :

2004

Packaging :

Tube

Turn On Delay Time :

10 ns

RoHS Status :

RoHS Compliant

Drain-source On Resistance-Max :

0.09Ohm

Gate to Source Voltage (Vgs) :

30V

Terminal Form :

Gull wing

FET Type :

N-Channel

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Pins :

8

Voltage - Rated DC :

150V

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

2.5W

Dual Supply Voltage :

150V

Max Operating Temperature :

150°C

Rds On (Max) @ Id, Vgs :

90m Ω @ 2.2A, 10V

Power Dissipation-Max :

2.5W Ta

Continuous Drain Current (ID) :

3.6A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

REACH SVHC :

No SVHC

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Termination :

SMD/SMT

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

990pF @ 25V

Turn-Off Delay Time :

17 ns

Current - Continuous Drain (Id) @ 25°C :

3.6A Ta

Threshold Voltage :

5.5V