IRF7451

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Drain Current-Max (Abs) (ID) :

3.6A

Power Dissipation-Max :

2.5W Ta

JEDEC-95 Code :

MS-012AA

JESD-30 Code :

R-PDSO-G8

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2004

Current - Continuous Drain (Id) @ 25°C :

3.6A Ta

Drain to Source Voltage (Vdss) :

150V

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

990pF @ 25V

Vgs (Max) :

±30V

FET Type :

N-Channel

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

Non-RoHS Compliant

Rds On (Max) @ Id, Vgs :

90m Ω @ 2.2A, 10V

Transistor Application :

SWITCHING

JESD-609 Code :

e0

DS Breakdown Voltage-Min :

150V

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

210 mJ

Transistor Element Material :

SILICON

Number of Terminations :

8

Packaging :

Tube

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

28A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Finish :

TIN LEAD

HTS Code :

8541.29.00.95

Peak Reflow Temperature (Cel) :

245

Surface Mount :

yes

Drain-source On Resistance-Max :

0.09Ohm

Operating Mode :

ENHANCEMENT MODE