IRF7450

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Qualification Status :

Not Qualified

Number of Terminations :

8

Mounting Type :

Surface Mount

JEDEC-95 Code :

MS-012AA

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Vgs (Max) :

±30V

Avalanche Energy Rating (Eas) :

230 mJ

Transistor Element Material :

SILICON

Terminal Finish :

TIN LEAD

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.17Ohm

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

JESD-609 Code :

e0

Power Dissipation-Max :

2.5W Ta

Packaging :

Tube

Terminal Position :

Dual

Series :

HEXFET®

Drain to Source Voltage (Vdss) :

200V

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-G8

Surface Mount :

yes

Published :

2001

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

Pulsed Drain Current-Max (IDM) :

20A

Peak Reflow Temperature (Cel) :

245

Additional Feature :

AVALANCHE RATED

Input Capacitance (Ciss) (Max) @ Vds :

940pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

2.5A

DS Breakdown Voltage-Min :

200V

HTS Code :

8541.29.00.95

RoHS Status :

Non-RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

170m Ω @ 1.5A, 10V

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Package / Case :

8-SOIC (0.154, 3.90mm Width)