IRF7433TRPBF
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- Mfr.Part #
- IRF7433TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 12V 8.9A 8SO
- Stock
- 3,289
- In Stock ：
- 3,289
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance :
- 1.877nF
- Lead Free :
- Lead Free
- Min Operating Temperature :
- -55°C
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Supplier Device Package :
- 8-SO
- Power Dissipation-Max :
- 2.5W Ta
- Rds On (Max) @ Id, Vgs :
- 24mOhm @ 8.7A, 4.5V
- Current - Continuous Drain (Id) @ 25°C :
- 8.9A Ta
- Rds On Max :
- 24 mΩ
- Gate to Source Voltage (Vgs) :
- 8V
- Voltage - Rated DC :
- -12V
- Number of Pins :
- 8
- Series :
- HEXFET®
- Drain to Source Voltage (Vdss) :
- 12V
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 1877pF @ 10V
- Current Rating :
- -8.9A
- Max Operating Temperature :
- 150°C
- Resistance :
- 24mOhm
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 4.5V
- Vgs(th) (Max) @ Id :
- 900mV @ 250μA
- Mounting Type :
- Surface Mount
- Drain to Source Resistance :
- 24mOhm
- Rise Time :
- 8.2ns
- Published :
- 2004
- Continuous Drain Current (ID) :
- 8.9A
- Drain to Source Breakdown Voltage :
- -12V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±8V
- Power Dissipation :
- 2.5W
- RoHS Status :
- RoHS Compliant
- FET Type :
- P-Channel
- Packaging :
- Tape and Reel (TR)
- Datasheets
- IRF7433TRPBF
P-Channel Tape & Reel (TR) 24mOhm @ 8.7A, 4.5V ±8V 1877pF @ 10V 20nC @ 4.5V 12V 8-SOIC (0.154, 3.90mm Width)
IRF7433TRPBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1877pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 8.9A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-12V. And this device has -12V drain to source breakdown voltage. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 24mOhm. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 8V.Operating this transistor requires a 12V drain to source voltage (Vdss).By using drive voltage (1.8V 4.5V), this device helps reduce its overall power consumption.
IRF7433TRPBF Features
a continuous drain current (ID) of 8.9A
a drain-to-source breakdown voltage of -12V voltage
single MOSFETs transistor is 24mOhm
a 12V drain to source voltage (Vdss)
IRF7433TRPBF Applications
There are a lot of Infineon Technologies
IRF7433TRPBF applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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