IRF7425TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

8

Input Capacitance (Ciss) (Max) @ Vds :

7980pF @ 15V

Lead Free :

Contains Lead

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Dual Supply Voltage :

20V

JESD-609 Code :

e3

Continuous Drain Current (ID) :

-15A

Transistor Application :

SWITCHING

Voltage - Rated DC :

-20V

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Element Configuration :

Single

Transistor Element Material :

SILICON

Resistance :

8.2mOhm

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 4.5V

Turn-Off Delay Time :

230 ns

Vgs (Max) :

±12V

Height :

1.75mm

Drain to Source Breakdown Voltage :

-20V

Rise Time :

20ns

Number of Elements :

1

FET Type :

P-Channel

Series :

HEXFET®

Time@Peak Reflow Temperature-Max (s) :

30

Nominal Vgs :

1.2 V

Published :

2006

Gate to Source Voltage (Vgs) :

12V

Mount :

Surface Mount

Power Dissipation-Max :

2.5W Ta

Radiation Hardening :

No

Factory Lead Time :

12 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

8.2m Ω @ 15A, 4.5V

Terminal Position :

Dual

Number of Terminations :

8

Mounting Type :

Surface Mount

Width :

3.9878mm

Peak Reflow Temperature (Cel) :

260

Length :

4.9784mm

Vgs(th) (Max) @ Id :

1.2V @ 250µA

ECCN Code :

EAR99

Recovery Time :

180 ns

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Contact Plating :

Tin

Threshold Voltage :

-1.2V

RoHS Status :

ROHS3 Compliant

Max Junction Temperature (Tj) :

150°C

Pulsed Drain Current-Max (IDM) :

60A

Turn On Delay Time :

13 ns

Current Rating :

-15A

Power Dissipation :

2.5W

Packaging :

Tape and Reel (TR)

Termination :

SMD/SMT

Fall Time (Typ) :

160 ns