IRF7424PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Terminal Finish :

Matte Tin (Sn)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Current - Continuous Drain (Id) @ 25°C :

11A Ta

JEDEC-95 Code :

MS-012AA

Published :

2004

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

30V

Power Dissipation-Max :

2.5W Ta

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

JESD-30 Code :

R-PDSO-G8

Mounting Type :

Surface Mount

Terminal Position :

Dual

Drain to Source Voltage (Vdss) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

13.5m Ω @ 11A, 10V

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

47A

Surface Mount :

yes

Transistor Application :

SWITCHING

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

11A

Terminal Form :

Gull wing

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Number of Terminations :

8

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.0135Ohm

Input Capacitance (Ciss) (Max) @ Vds :

4030pF @ 25V

Series :

HEXFET®

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

FET Type :

P-Channel