IRF7420TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

-12V

Series :

HEXFET®

Vgs (Max) :

±8V

Current - Continuous Drain (Id) @ 25°C :

11.5A Tc

Width :

3.9878mm

FET Type :

P-Channel

Factory Lead Time :

12 Weeks

ECCN Code :

EAR99

Terminal Form :

Gull wing

Height :

1.4986mm

Mount :

Surface Mount

Length :

4.9784mm

Additional Feature :

ULTRA LOW RESISTANCE

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

-12V

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

900mV @ 250μA

JESD-609 Code :

e3

Rise Time :

8.8ns

Resistance :

14mOhm

Power Dissipation :

2.5W

Number of Pins :

8

Gate to Source Voltage (Vgs) :

8V

Time@Peak Reflow Temperature-Max (s) :

30

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 4.5V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Pulsed Drain Current-Max (IDM) :

46A

Terminal Position :

Dual

Lead Free :

Lead Free

Current Rating :

-11.5A

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Element Configuration :

Single

Turn-Off Delay Time :

291 ns

Radiation Hardening :

No

Mounting Type :

Surface Mount

Number of Terminations :

8

Transistor Application :

SWITCHING

Power Dissipation-Max :

2.5W Ta

Drain to Source Voltage (Vdss) :

12V

Input Capacitance (Ciss) (Max) @ Vds :

3529pF @ 10V

Fall Time (Typ) :

225 ns

Nominal Vgs :

-900 mV

Turn On Delay Time :

8.8 ns

Rds On (Max) @ Id, Vgs :

14m Ω @ 11.5A, 4.5V

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

11.5mA

RoHS Status :

ROHS3 Compliant

Published :

2006