IRF7420TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PDSO-G8

Series :

HEXFET®

Vgs (Max) :

±8V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

3529pF @ 10V

Additional Feature :

ULTRA LOW RESISTANCE

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

11.5A

Drain to Source Voltage (Vdss) :

12V

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

14m Ω @ 11.5A, 4.5V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

11.5A Tc

FET Type :

P-Channel

DS Breakdown Voltage-Min :

12V

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Number of Terminations :

8

Power Dissipation-Max :

2.5W Ta

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2006

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

900mV @ 250μA

RoHS Status :

Non-RoHS Compliant

Mounting Type :

Surface Mount

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

46A

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 4.5V

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.014Ohm