IRF7420PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

8V

Lead Free :

Lead Free

Length :

4.9784mm

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Drain to Source Voltage (Vdss) :

12V

Power Dissipation :

2.5W

Rds On (Max) @ Id, Vgs :

14m Ω @ 11.5A, 4.5V

Vgs(th) (Max) @ Id :

900mV @ 250μA

Vgs (Max) :

±8V

Input Capacitance (Ciss) (Max) @ Vds :

3529pF @ 10V

Resistance :

14mOhm

Dual Supply Voltage :

-12V

Current Rating :

-11.5A

Contact Plating :

Tin

Threshold Voltage :

-900mV

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Power Dissipation-Max :

2.5W Ta

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

11.5A Tc

Width :

3.9878mm

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Nominal Vgs :

-900 mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

225 ns

Mount :

Surface Mount

Voltage - Rated DC :

-12V

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

Height :

1.4986mm

FET Type :

P-Channel

Turn On Delay Time :

8.8 ns

Drain to Source Breakdown Voltage :

-12V

Continuous Drain Current (ID) :

-11.5A

Series :

HEXFET®

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 4.5V

Packaging :

Tube

Rise Time :

8.8ns

Number of Elements :

1

Published :

2004

Turn-Off Delay Time :

291 ns