IRF7420

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

900mV @ 250μA

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

46A

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

12V

Number of Elements :

1

Series :

HEXFET®

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Drain-source On Resistance-Max :

0.014Ohm

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

3529pF @ 10V

RoHS Status :

Non-RoHS Compliant

Power Dissipation-Max :

2.5W Ta

JEDEC-95 Code :

MS-012AA

JESD-30 Code :

R-PDSO-G8

Vgs (Max) :

±8V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

8

Drain Current-Max (Abs) (ID) :

11.5A

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Current - Continuous Drain (Id) @ 25°C :

11.5A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

DS Breakdown Voltage-Min :

12V

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 4.5V

Published :

2006

Terminal Finish :

NOT SPECIFIED

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

14m Ω @ 11.5A, 4.5V