IRF7416TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2005

Max Junction Temperature (Tj) :

150°C

Vgs (Max) :

±20V

JESD-609 Code :

e3

Package / Case :

8-SOIC (0.154, 3.90mm Width)

ECCN Code :

EAR99

Number of Channels :

1

Threshold Voltage :

-2.04V

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 25V

FET Type :

P-Channel

Terminal Position :

Dual

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

20m Ω @ 5.6A, 10V

Radiation Hardening :

No

Series :

HEXFET®

Vgs(th) (Max) @ Id :

1V @ 250μA

Length :

4.9784mm

Height :

1.75mm

Number of Pins :

8

Pulsed Drain Current-Max (IDM) :

45A

Recovery Time :

85 ns

Fall Time (Typ) :

60 ns

Rise Time :

49ns

Gate Charge (Qg) (Max) @ Vgs :

92nC @ 10V

Nominal Vgs :

-20 V

Additional Feature :

ULTRA LOW RESISTANCE

Resistance :

20mOhm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

370 mJ

Current Rating :

-10A

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

-30V

Factory Lead Time :

12 Weeks

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

-10A

Turn-Off Delay Time :

59 ns

Width :

3.9878mm

Termination :

SMD/SMT

Power Dissipation :

2.5W

Contact Plating :

Tin

Number of Elements :

1

Lead Free :

Lead Free

Number of Terminations :

8

Row Spacing :

6.3 mm

Drain to Source Voltage (Vdss) :

30V

Dual Supply Voltage :

-30V

Turn On Delay Time :

18 ns

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Power Dissipation-Max :

2.5W Ta

Drain to Source Breakdown Voltage :

-30V