IRF7413ZGTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

8.7 ns

Mount :

Surface Mount

Number of Elements :

1

Drain to Source Breakdown Voltage :

30V

Number of Pins :

8

Series :

HEXFET®

Max Operating Temperature :

150°C

Drain to Source Voltage (Vdss) :

30V

Input Capacitance :

1.21nF

Supplier Device Package :

8-SO

Rise Time :

6.3ns

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Turn-Off Delay Time :

11 ns

Length :

4.9784mm

Mounting Type :

Surface Mount

FET Type :

N-Channel

RoHS Status :

RoHS Compliant

Vgs (Max) :

±20V

Fall Time (Typ) :

3.8 ns

Width :

3.9878mm

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

Gate to Source Voltage (Vgs) :

20V

Published :

2009

Min Operating Temperature :

-55°C

Rds On Max :

10 MΩ

Drain to Source Resistance :

10MOhm

Height :

1.4986mm

Continuous Drain Current (ID) :

13A

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

1210pF @ 15V

Rds On (Max) @ Id, Vgs :

10mOhm @ 13A, 10V

Power Dissipation-Max :

2.5W Ta

Vgs(th) (Max) @ Id :

2.25V @ 25μA

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

2.5W