IRF7413TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

2.5W

Threshold Voltage :

3V

ECCN Code :

EAR99

Lead Free :

Contains Lead, Lead Free

Rise Time :

50ns

Recovery Time :

110 ns

Nominal Vgs :

3 V

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Number of Terminations :

8

Fall Time (Typ) :

46 ns

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

11m Ω @ 7.3A, 10V

Height :

1.75mm

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Width :

3.9878mm

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

52 ns

Series :

HEXFET®

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

13A

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

30V

Voltage - Rated DC :

30V

Additional Feature :

ULTRA LOW RESISTANCE

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Mounting Type :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

JESD-609 Code :

e3

Row Spacing :

6.3 mm

Number of Channels :

1

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Number of Pins :

8

Current Rating :

13A

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Gate Charge (Qg) (Max) @ Vgs :

79nC @ 10V

Dual Supply Voltage :

30V

Vgs(th) (Max) @ Id :

3V @ 250µA

Published :

2007

FET Type :

N-Channel

Length :

4.9784mm

Turn On Delay Time :

8.6 ns

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

260 mJ

Factory Lead Time :

12 Weeks

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Power Dissipation-Max :

2.5W Ta

Max Junction Temperature (Tj) :

150°C

Mount :

Surface Mount

Resistance :

11mOhm