IRF7413GTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

52 ns

Series :

HEXFET®

Drain to Source Resistance :

11mOhm

Radiation Hardening :

No

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Min Operating Temperature :

-55°C

Input Capacitance :

1.8nF

Operating Temperature :

-55°C~150°C TJ

Rise Time :

50ns

Power Dissipation :

2.5W

Height :

1.4986mm

Power Dissipation-Max :

2.5W Ta

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

11mOhm @ 7.3A, 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Type :

N-Channel

Supplier Device Package :

8-SO

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Length :

4.9784mm

Fall Time (Typ) :

46 ns

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

8.6 ns

Width :

3.9878mm

Number of Pins :

8

Published :

2009

Gate Charge (Qg) (Max) @ Vgs :

79nC @ 10V

Continuous Drain Current (ID) :

13A

Vgs (Max) :

±20V

Rds On Max :

11 mΩ

Mount :

Surface Mount

Max Operating Temperature :

150°C

RoHS Status :

RoHS Compliant

Drain to Source Breakdown Voltage :

30V

Current - Continuous Drain (Id) @ 25°C :

13A Ta