IRF7413A

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Number of Terminations :

8

Terminal Form :

Gull wing

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

260 mJ

Power Dissipation-Max :

2.5W Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Operating Temperature (Max) :

150°C

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

58A

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

30V

Vgs(th) (Max) @ Id :

1V @ 250μA

JESD-30 Code :

R-PDSO-G8

DS Breakdown Voltage-Min :

30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

79nC @ 10V

Vgs (Max) :

±20V

RoHS Status :

Non-RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

12A Ta

Drain Current-Max (Abs) (ID) :

12A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Application :

SWITCHING

FET Type :

N-Channel

Published :

1997

Additional Feature :

High Reliability

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

HEXFET®

Drain-source On Resistance-Max :

0.0135Ohm

JEDEC-95 Code :

MS-012AA

Rds On (Max) @ Id, Vgs :

13.5m Ω @ 6.6A, 10V

Terminal Position :

Dual

Mounting Type :

Surface Mount

Packaging :

Tube