IRF7410GTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

65A

Number of Pins :

8

Power Dissipation :

2.5W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

2.5W Ta

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Rise Time :

18ns

Element Configuration :

Single

Width :

3.9878mm

Mounting Type :

Surface Mount

Height :

1.4986mm

Gate to Source Voltage (Vgs) :

8V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

8676pF @ 10V

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.007Ohm

Additional Feature :

ULTRA LOW RESISTANCE

Vgs(th) (Max) @ Id :

900mV @ 250μA

Length :

4.9784mm

Terminal Finish :

Matte Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

91nC @ 4.5V

Continuous Drain Current (ID) :

16A

Mount :

Surface Mount

Factory Lead Time :

18 Weeks

Number of Terminations :

8

Drain to Source Voltage (Vdss) :

12V

Series :

HEXFET®

Fall Time (Typ) :

300 ns

Transistor Application :

SWITCHING

Published :

2009

Rds On (Max) @ Id, Vgs :

7m Ω @ 16A, 4.5V

JESD-609 Code :

e3

Turn On Delay Time :

13 ns

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

271 ns

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±8V

Radiation Hardening :

No

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Drain to Source Breakdown Voltage :

-12V

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

16A Ta