IRF7410GTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Terminal Position :

Dual

Vgs (Max) :

±8V

Turn-Off Delay Time :

271 ns

Published :

2009

Transistor Element Material :

SILICON

Additional Feature :

ULTRA LOW RESISTANCE

Gate to Source Voltage (Vgs) :

8V

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

8676pF @ 10V

Factory Lead Time :

18 Weeks

Drain to Source Breakdown Voltage :

-12V

Continuous Drain Current (ID) :

16A

Rise Time :

18ns

ECCN Code :

EAR99

Series :

HEXFET®

Pulsed Drain Current-Max (IDM) :

65A

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

91nC @ 4.5V

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Power Dissipation-Max :

2.5W Ta

Height :

1.4986mm

Current - Continuous Drain (Id) @ 25°C :

16A Ta

Vgs(th) (Max) @ Id :

900mV @ 250μA

Element Configuration :

Single

FET Type :

P-Channel

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

12V

Terminal Finish :

Matte Tin (Sn)

Fall Time (Typ) :

300 ns

Drain-source On Resistance-Max :

0.007Ohm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Length :

4.9784mm

Turn On Delay Time :

13 ns

Number of Terminations :

8

Rds On (Max) @ Id, Vgs :

7m Ω @ 16A, 4.5V

Mount :

Surface Mount

Power Dissipation :

2.5W

Radiation Hardening :

No

Width :

3.9878mm