IRF740STRRPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Element Material :

SILICON

Number of Elements :

1

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

Number of Channels :

1

FET Type :

N-Channel

Case Connection :

DRAIN

Radiation Hardening :

No

Width :

9.65mm

Avalanche Energy Rating (Eas) :

520 mJ

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

24 ns

JESD-609 Code :

e3

Pin Count :

3

Number of Terminations :

2

Drain-source On Resistance-Max :

0.55Ohm

DS Breakdown Voltage-Min :

400V

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

3.1W Ta 125W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Weight :

1.437803g

Pbfree Code :

yes

Factory Lead Time :

11 Weeks

Turn-Off Delay Time :

50 ns

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V

Additional Feature :

AVALANCHE RATED

Terminal Finish :

Matte Tin (Sn)

Pulsed Drain Current-Max (IDM) :

40A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Peak Reflow Temperature (Cel) :

260

Published :

2012

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Terminal Form :

Gull wing

Turn On Delay Time :

14 ns

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

10A

Transistor Application :

SWITCHING

Power Dissipation :

3.1W

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

550m Ω @ 6A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Length :

10.67mm

Drain to Source Voltage (Vdss) :

400V

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Height :

4.83mm

Rise Time :

27ns